N-Channel MOSFET, 100 A, 40 V, 8-Pin PowerPAK SO-8DC Vishay SIDR638DP-T1-RE3

SIDR638DP-T1-RE3 N-Channel MOSFET, 100 A, 40 V, 8-Pin PowerPAK SO-8DC Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
TrenchFET® Gen IV
Channel Type:
N
Maximum Gate Threshold Voltage:
2.3V
Maximum Drain Source Resistance:
0.00088 Ω, 0.00116 Ω
Package Type:
PowerPAK SO-8DC
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
100 A
Pin Count:
8
RoHs Compliant
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This is N-Channel MOSFET 100 A 40 V 8-Pin PowerPAK SO-8DC manufactured by Vishay. The manufacturer part number is SIDR638DP-T1-RE3. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet® gen iv, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.3v of maximum gate threshold voltage. It provides up to 0.00088 ω, 0.00116 ω maximum drain source resistance. The package is a sort of powerpak so-8dc. It consists of 1 elements per chip. While 100 a of maximum continuous drain current. It contains 8 pins.

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Document- SIDR638DP-T1-RE3(Technical Reference)

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