P-Channel MOSFET, 16 A, 30 V, 8-Pin PowerPAK 1212-8W Vishay SQS423ENW-T1_GE3

SQS423ENW-T1_GE3 P-Channel MOSFET, 16 A, 30 V, 8-Pin PowerPAK 1212-8W Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
30 V
Maximum Continuous Drain Current:
16 A
Channel Mode:
Enhancement
Series:
AEC-Q101, Automotive, TrenchFET®
Channel Type:
P
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
0.06 Ω, 0.021 Ω
Package Type:
PowerPAK 1212-8W
Number of Elements per Chip:
1
Pin Count:
8
RoHs Compliant
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This is P-Channel MOSFET 16 A 30 V 8-Pin PowerPAK 1212-8W manufactured by Vishay. The manufacturer part number is SQS423ENW-T1_GE3. It has a maximum of 30 v drain source voltage. While 16 a of maximum continuous drain current. The product carries enhancement channel mode. The product aec-q101, automotive, trenchfet®, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.5v of maximum gate threshold voltage. It provides up to 0.06 ω, 0.021 ω maximum drain source resistance. The package is a sort of powerpak 1212-8w. It consists of 1 elements per chip. It contains 8 pins.

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Document- SQS423ENW-T1_GE3(Technical Reference)

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