N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB Vishay SIHP690N60E-GE3

Enrgtech Part No: ET19996194
|
Manufacturer Part No:
SIHP690N60E-GE3
|
Manufacturer: Vishay

SIHP690N60E-GE3 N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB Vishay

Product Information

Maximum Drain Source Voltage:

650 V

Mounting Type:

Through Hole

Channel Mode:

Enhancement

Series:

Channel Type:

Maximum Gate Threshold Voltage:

Maximum Drain Source Resistance:

0.7 Ω

Package Type:

TO-220AB

Number of Elements per Chip:

Maximum Continuous Drain Current:

4 A, 6.4 A

Pin Count:

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This is N-Channel MOSFET 4 A 6.4 A 650 V 3-Pin TO-220AB manufactured by Vishay. The manufacturer part number is SIHP690N60E-GE3. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product e, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.7 ω maximum drain source resistance. The package is a sort of to-220ab. It consists of 1 elements per chip. While 4 a, 6.4 a of maximum continuous drain current. It contains 3 pins.

Document- SIHP690N60E-GE3(Technical Reference)

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You will get a confirmation email regarding your order of N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB Vishay SIHP690N60E-GE3. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB Vishay SIHP690N60E-GE3.

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N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB Vishay SIHP690N60E-GE3

SIHP690N60E-GE3

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