N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L Vishay SIHJ690N60E-T1-GE3

SIHJ690N60E-T1-GE3 N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
3.5 A, 5.6 A
Channel Mode:
Enhancement
Series:
E
Channel Type:
N
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
0.7 Ω
Package Type:
PowerPAK SO-8L
Number of Elements per Chip:
1
Pin Count:
5
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 3.5 A 5.6 A 650 V 5-Pin PowerPAK SO-8L manufactured by Vishay. The manufacturer part number is SIHJ690N60E-T1-GE3. It has a maximum of 650 v drain source voltage. While 3.5 a, 5.6 a of maximum continuous drain current. The product carries enhancement channel mode. The product e, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.7 ω maximum drain source resistance. The package is a sort of powerpak so-8l. It consists of 1 elements per chip. It contains 5 pins.

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Document- SIHJ690N60E-T1-GE3(Technical Reference)

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You will get a confirmation email regarding your order of N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L Vishay SIHJ690N60E-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L Vishay SIHJ690N60E-T1-GE3.
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