N-Channel MOSFET, 14 A, 23 A, 650 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH125N60EF-T1GE3

SIHH125N60EF-T1GE3 N-Channel MOSFET, 14 A, 23 A, 650 V, 4-Pin PowerPAK 8 x 8 Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
EF
Channel Type:
N
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
0.125 Ω
Package Type:
PowerPAK 8 x 8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
14 A, 23 A
Pin Count:
4
RoHs Compliant
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This is N-Channel MOSFET 14 A 23 A 650 V 4-Pin PowerPAK 8 x 8 manufactured by Vishay. The manufacturer part number is SIHH125N60EF-T1GE3. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product ef, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.125 ω maximum drain source resistance. The package is a sort of powerpak 8 x 8. It consists of 1 elements per chip. While 14 a, 23 a of maximum continuous drain current. It contains 4 pins.

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Document- SIHH125N60EF-T1GE3(Technical Reference)

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You will get a confirmation email regarding your order of N-Channel MOSFET, 14 A, 23 A, 650 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH125N60EF-T1GE3. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 14 A, 23 A, 650 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH125N60EF-T1GE3.
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