N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SiRA18BDP-T1-GE3

SiRA18BDP-T1-GE3 N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
30 V
Maximum Continuous Drain Current:
40 A
Channel Mode:
Enhancement
Series:
TrenchFET® Gen IV
Channel Type:
N
Maximum Gate Threshold Voltage:
2.4V
Maximum Drain Source Resistance:
0.00683 O, 0.0105 O
Package Type:
PowerPAK SO-8
Number of Elements per Chip:
1
Pin Count:
8
RoHs Compliant
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This is N-Channel MOSFET 40 A 30 V 8-Pin PowerPAK SO-8 manufactured by Vishay. The manufacturer part number is SiRA18BDP-T1-GE3. It has a maximum of 30 v drain source voltage. While 40 a of maximum continuous drain current. The product carries enhancement channel mode. The product trenchfet® gen iv, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.4v of maximum gate threshold voltage. It provides up to 0.00683 o, 0.0105 o maximum drain source resistance. The package is a sort of powerpak so-8. It consists of 1 elements per chip. It contains 8 pins.

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Document- SiRA18BDP-T1-GE3(Technical Reference)

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