N-Channel MOSFET, 11.5 A, 250 V, 3-Pin DPAK Vishay SQD10950E_GE3

SQD10950E_GE3 N-Channel MOSFET, 11.5 A, 250 V, 3-Pin DPAK Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
250 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
AEC-Q101, Automotive, TrenchFET®
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
0.18 Ω, 0.162 Ω
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
11.5 A
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 11.5 A 250 V 3-Pin DPAK manufactured by Vishay. The manufacturer part number is SQD10950E_GE3. It has a maximum of 250 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product aec-q101, automotive, trenchfet®, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 0.18 ω, 0.162 ω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 11.5 a of maximum continuous drain current. It contains 3 pins.

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Document- SQD10950E_GE3(Technical Reference)

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