Dual SiC N-Channel SiC Power Module, 200 A, 1200 V, 35-Pin Easy 2B™/ Module Infineon FF6MR12W2M1B11BOMA1

FF6MR12W2M1B11BOMA1 Dual SiC N-Channel SiC Power Module, 200 A, 1200 V, 35-Pin Easy 2B™/ Module Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
1200 V
Maximum Continuous Drain Current:
200 A
Channel Mode:
Enhancement
Series:
CoolSiC
Channel Type:
N
Maximum Gate Threshold Voltage:
5.55V
Maximum Drain Source Resistance:
0.00825 Ω
Package Type:
Easy 2B™/ Module
Number of Elements per Chip:
2
Transistor Material:
SiC
Pin Count:
35
RoHs Compliant
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This is Dual SiC N-Channel SiC Power Module 200 A 1200 V 35-Pin Easy 2B™/ Module manufactured by Infineon. The manufacturer part number is FF6MR12W2M1B11BOMA1. It has a maximum of 1200 v drain source voltage. While 200 a of maximum continuous drain current. The product carries enhancement channel mode. The product coolsic, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5.55v of maximum gate threshold voltage. It provides up to 0.00825 ω maximum drain source resistance. The package is a sort of easy 2b™/ module. It consists of 2 elements per chip. The transistor is manufactured from highly durable sic material. It contains 35 pins.

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Datasheet - FF6MR12W2M1B11BOMA1(Technical Reference)

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You will get a confirmation email regarding your order of Dual SiC N-Channel SiC Power Module, 200 A, 1200 V, 35-Pin Easy 2B™/ Module Infineon FF6MR12W2M1B11BOMA1. You can also check on our website or by contacting our customer support team for further order details on Dual SiC N-Channel SiC Power Module, 200 A, 1200 V, 35-Pin Easy 2B™/ Module Infineon FF6MR12W2M1B11BOMA1.
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