STMicroelectronics STW70N65DM6

STW70N65DM6 STMicroelectronics
STW70N65DM6
STMicroelectronics

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Through Hole
Channel Mode:
Depletion
Series:
ST
Channel Type:
N
Maximum Gate Threshold Voltage:
4.75V
Maximum Drain Source Resistance:
0.036 Ω
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
68 A
Transistor Material:
SiC
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.75V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
40mOhm @ 34A, 10V
Gate Charge (Qg) (Max) @ Vgs:
125 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STW70N65DM6 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/11591047
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
450W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4900 pF @ 100 V
standardLeadTime:
26 Weeks
Mounting Type:
Through Hole
Series:
MDmesh™ DM6
Supplier Device Package:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
68A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STW70
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STW70N65DM6. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries depletion channel mode. The product st, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.75v of maximum gate threshold voltage. It provides up to 0.036 ω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 68 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.75v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 40mohm @ 34a, 10v. The maximum gate charge and given voltages include 125 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 450w (tc). The product's input capacitance at maximum includes 4900 pf @ 100 v. It has a long 26 weeks standard lead time. The product mdmesh™ dm6, is a highly preferred choice for users. to-247-3 is the supplier device package value. The continuous current drain at 25°C is 68a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stw70, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet - STW70N65DM6(Technical Reference)
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STW70N65DM6(Datasheets)
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Standard outer labelling 15/Nov/2023(PCN Packaging)

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