Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
SCTH35
Channel Type:
N
Maximum Gate Threshold Voltage:
3.2V
Maximum Drain Source Resistance:
0.055 Ω
Package Type:
H2PAK-7
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
45 A
Transistor Material:
SiC
Pin Count:
7
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
67mOhm @ 20A, 20V
title:
SCTH35N65G2V-7
Vgs(th) (Max) @ Id:
5V @ 1mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V, 20V
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
208W (Tc)
standardLeadTime:
32 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1370 pF @ 400 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
73 nC @ 20 V
Supplier Device Package:
H2PAK-7
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCTH35
ECCN:
EAR99
