STMicroelectronics SCTW100N65G2AG

SCTW100N65G2AG STMicroelectronics
SCTW100N65G2AG
STMicroelectronics

Product Information

Maximum Drain Source Voltage:
1200 V
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Series:
SCT
Channel Type:
N
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
0.105 Ω
Package Type:
H2PAK-7
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
33 A
Transistor Material:
SiC
Pin Count:
7
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
26mOhm @ 50A, 18V
title:
SCTW100N65G2AG
Vgs(th) (Max) @ Id:
5V @ 5mA
REACH Status:
REACH Unaffected
edacadModel:
SCTW100N65G2AG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
edacadModelUrl:
/en/models/11591209
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
420W (Tc)
Qualification:
AEC-Q101
standardLeadTime:
32 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3315 pF @ 520 V
Mounting Type:
Through Hole
Grade:
Automotive
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
162 nC @ 18 V
Supplier Device Package:
HiP247™
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCTW100
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is SCTW100N65G2AG. It has a maximum of 1200 v drain source voltage. The product is available in surface mount configuration. The product carries depletion channel mode. The product sct, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.105 ω maximum drain source resistance. The package is a sort of h2pak-7. It consists of 1 elements per chip. While 33 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 7 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 26mohm @ 50a, 18v. The typical Vgs (th) (max) of the product is 5v @ 5ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v. The product has a 650 v drain to source voltage. The maximum Vgs rate is +22v, -10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 420w (tc). It has a long 32 weeks standard lead time. The product's input capacitance at maximum includes 3315 pf @ 520 v. The product is available in through hole configuration. The product is automotive, a grade of class. The maximum gate charge and given voltages include 162 nc @ 18 v. hip247™ is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 100a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to sctw100, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet - SCTW100N65G2AG(Technical Reference)
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SCTW100N65G2AG(Datasheets)
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TO247 Frame 24-Feb-2022(PCN Design/Specification)
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Standard outer labelling 15/Nov/2023(PCN Packaging)

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