SiC MOSFET, 1200 V Wolfspeed CAB450M12XM3

CAB450M12XM3 SiC MOSFET, 1200 V Wolfspeed
Wolfspeed

Product Information

Maximum Drain Source Voltage:
1200 V
Typical Gate Charge @ Vgs:
1330 nC @ 4/15V
Maximum Power Dissipation:
50 mW
Maximum Gate Source Voltage:
-4 V, 19 V
Maximum Gate Threshold Voltage:
3.6V
Transistor Material:
SiC
Width:
53mm
Length:
80mm
Number of Elements per Chip:
1
Minimum Operating Temperature:
-40 °C
Minimum Gate Threshold Voltage:
1.8V
Height:
15.75mm
Maximum Operating Temperature:
+175 °C
Maximum Drain Source Resistance:
4.6 mΩ
RoHs Compliant
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This is SiC MOSFET 1200 V manufactured by Wolfspeed. The manufacturer part number is CAB450M12XM3. It has a maximum of 1200 v drain source voltage. With a typical gate charge at Vgs includes 1330 nc @ 4/15v. Provides up to 50 mw maximum power dissipation. It features a maximum gate source voltage of -4 v, 19 v. The product carries 3.6v of maximum gate threshold voltage. The transistor is manufactured from highly durable sic material. Furthermore, the product is 53mm wide. Its accurate length is 80mm. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -40 °c. Whereas its minimum gate threshold voltage includes 1.8v. In addition, the height is 15.75mm. It has a maximum operating temperature of +175 °c. It provides up to 4.6 mω maximum drain source resistance.

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Datasheet - CAB450M12XM3(Technical Reference)

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