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N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-23 Microchip TN2106K1-G

TN2106K1-G N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-23 Microchip
Microchip

Product Information

Maximum Continuous Drain Current:
280 mA
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2V
Package Type:
TO-236
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Channel Type:
N
Length:
3.04mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
360 mW
Series:
TN2106
Maximum Gate Source Voltage:
20 V
Height:
1.02mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.8V
Maximum Drain Source Resistance:
5 Ω
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 280 mA 60 V 3-Pin SOT-23 manufactured by Microchip. The manufacturer part number is TN2106K1-G. While 280 ma of maximum continuous drain current. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of to-236. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.6v. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 3.04mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 360 mw maximum power dissipation. The product tn2106, is a highly preferred choice for users. It features a maximum gate source voltage of 20 v. In addition, the height is 1.02mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.8v . It provides up to 5 ω maximum drain source resistance.

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Datasheet(Technical Reference)

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