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N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 Microchip 2N7000-G

2N7000-G N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 Microchip
Microchip

Product Information

Maximum Continuous Drain Current:
200 mA
Width:
4.06mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
3V
Package Type:
TO-92
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.8V
Maximum Operating Temperature:
+150 °C
Channel Type:
N
Length:
5.08mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
1 W
Series:
2N7000
Maximum Gate Source Voltage:
30 V
Height:
5.33mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.85V
Maximum Drain Source Resistance:
5.3 Ω
RoHs Compliant
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This is N-Channel MOSFET 200 mA 60 V 3-Pin TO-92 manufactured by Microchip. The manufacturer part number is 2N7000-G. While 200 ma of maximum continuous drain current. Furthermore, the product is 4.06mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of to-92. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.8v. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 5.08mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 1 w maximum power dissipation. The product 2n7000, is a highly preferred choice for users. It features a maximum gate source voltage of 30 v. In addition, the height is 5.33mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 0.85v . It provides up to 5.3 ω maximum drain source resistance.

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Datasheet(Technical Reference)

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