N-Channel MOSFET, 350 mA, 90 V, 3-Pin TO-39 Microchip 2N6661
Product Information
Maximum Drain Source Voltage:
90 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
6.25 W
Series:
2N6661
Maximum Gate Source Voltage:
20 V
Height:
6.6mm
Width:
9.398 Dia.mm
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
5 Ω
Package Type:
TO-39
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
350 mA
Minimum Gate Threshold Voltage:
0.8V
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-Channel MOSFET 350 mA 90 V 3-Pin TO-39 manufactured by Microchip. The manufacturer part number is 2N6661. It has a maximum of 90 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 6.25 w maximum power dissipation. The product 2n6661, is a highly preferred choice for users. It features a maximum gate source voltage of 20 v. In addition, the height is 6.6mm. Furthermore, the product is 9.398 dia.mm wide. The product carries 2v of maximum gate threshold voltage. It provides up to 5 ω maximum drain source resistance. The package is a sort of to-39. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 350 ma of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.8v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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