Maximum Continuous Drain Current:
7 A
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4.75V
Package Type:
PowerFLAT 5 x 6 HV
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.25V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Channel Type:
N
Length:
6mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
52 W
Maximum Gate Source Voltage:
±25 V
Height:
0.95mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.6V
Maximum Drain Source Resistance:
415 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.75V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
415mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STL13N60M6 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/10209870
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
509 pF @ 100 V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
MDmesh™ M6
Supplier Device Package:
PowerFlat™ (5x6) HV
Current - Continuous Drain (Id) @ 25°C:
7A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STL13
ECCN:
EAR99
