Typical Gate Charge @ Vgs:
62 @ 3.8 V nC
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Maximum Power Dissipation:
3.3 W
Maximum Gate Source Voltage:
±8 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.14mm
Width:
1.8mm
Length:
3.57mm
Package Type:
WLCSP
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.4V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
10
Transistor Configuration:
Dual
FET Feature:
Logic Level Gate, 2.5V Drive
Base Part Number:
EFC2K103
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Common Drain 12V 40A (Ta) 3.3W (Ta) Surface Mount 10-WLCSP (3.54x1.77)
Gate Charge (Qg) (Max) @ Vgs:
62nC @ 6V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.3V @ 1mA
Drain to Source Voltage (Vdss):
12V
Package / Case:
10-SMD, No Lead
Rds On (Max) @ Id, Vgs:
1.8mOhm @ 5A, 4.5V
Supplier Device Package:
10-WLCSP (3.54x1.77)
Manufacturer Standard Lead Time:
27 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual) Common Drain
Customer Reference:
Power - Max:
3.3W (Ta)
Current - Continuous Drain (Id) @ 25°C:
40A (Ta)
Manufacturer:
ON Semiconductor