Deliver to
United Kingdom
This is 1200V N-ch SiC Trench MOSFET in 4pin Pac manufactured by ROHM. The manufacturer part number is SCT3080KRC14. It has a maximum of 1200 v drain source voltage. With a typical gate charge at Vgs includes 60 nc @ 18v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 165 w maximum power dissipation. It features a maximum gate source voltage of 22 v. The product is available in [Cannel Type] channel. The product carries 5.6v of maximum gate threshold voltage. It provides up to 104 mω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 31 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2.7v. The transistor is manufactured from highly durable sic material. It has a maximum operating temperature of +175 °c. It contains 4 pins. The product offers single transistor configuration.
For more information please check the datasheets.
Basket Total:
£ 0
