1200V N-ch SiC Trench MOSFET in 4pin Pac

SCT3040KRC14 1200V N-ch SiC Trench MOSFET in 4pin Pac
ROHM

Product Information

Maximum Drain Source Voltage:
1200 V
Typical Gate Charge @ Vgs:
107 nC @ 18V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
262 W
Maximum Gate Source Voltage:
22 V
Channel Type:
N
Maximum Gate Threshold Voltage:
5.6V
Maximum Drain Source Resistance:
52 mΩ
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
55 A
Minimum Gate Threshold Voltage:
2.7V
Transistor Material:
SiC
Maximum Operating Temperature:
+175 °C
Pin Count:
4
Transistor Configuration:
Single
RoHs Compliant
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This is 1200V N-ch SiC Trench MOSFET in 4pin Pac manufactured by ROHM. The manufacturer part number is SCT3040KRC14. It has a maximum of 1200 v drain source voltage. With a typical gate charge at Vgs includes 107 nc @ 18v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 262 w maximum power dissipation. It features a maximum gate source voltage of 22 v. The product is available in [Cannel Type] channel. The product carries 5.6v of maximum gate threshold voltage. It provides up to 52 mω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 55 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2.7v. The transistor is manufactured from highly durable sic material. It has a maximum operating temperature of +175 °c. It contains 4 pins. The product offers single transistor configuration.

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Datasheet SCT3040KRC14(Technical Reference)

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