STMicroelectronics SCT20N120H
Product Information
Maximum Drain Source Voltage:
1200 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
SiC MOSFET
Channel Type:
N
Maximum Gate Threshold Voltage:
239V
Maximum Drain Source Resistance:
0.203 Ω
Package Type:
H2PAK-2
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
20 A
Transistor Material:
SiC
Pin Count:
3
Manufacturer Standard Lead Time:
30 Weeks
Detailed Description:
N-Channel 1200V 20A (Tc) 175W (Tc) Surface Mount H2Pak-2
Vgs(th) (Max) @ Id:
3.5V @ 1mA
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
SCT20
Gate Charge (Qg) (Max) @ Vgs:
45nC @ 20V
Rds On (Max) @ Id, Vgs:
290mOhm @ 10A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
1200V
Vgs (Max):
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:
650pF @ 400V
Mounting Type:
Surface Mount
Supplier Device Package:
H2Pak-2
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Customer Reference:
Power Dissipation (Max):
175W (Tc)
Technology:
SiCFET (Silicon Carbide)
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Yes. We ship SCT20N120H Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is SCT20N120H. It has a maximum of 1200 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product sic mosfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 239v of maximum gate threshold voltage. It provides up to 0.203 ω maximum drain source resistance. The package is a sort of h2pak-2. It consists of 1 elements per chip. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 3 pins. It has typical 30 weeks of manufacturer standard lead time. It features n-channel 1200v 20a (tc) 175w (tc) surface mount h2pak-2. The typical Vgs (th) (max) of the product is 3.5v @ 1ma. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: sct20. The maximum gate charge and given voltages include 45nc @ 20v. It has a maximum Rds On and voltage of 290mohm @ 10a, 20v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. The stmicroelectronics's product offers user-desired applications. The product has a 1200v drain to source voltage. The maximum Vgs rate is +25v, -10v. The product's input capacitance at maximum includes 650pf @ 400v. h2pak-2 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 20a (tc). The product carries maximum power dissipation 175w (tc). This product use sicfet (silicon carbide) technology.
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