Maximum Drain Source Voltage:
1200 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
SiC MOSFET
Channel Type:
N
Maximum Gate Threshold Voltage:
239V
Maximum Drain Source Resistance:
0.203 Ω
Package Type:
H2PAK-2
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
20 A
Transistor Material:
SiC
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
290mOhm @ 10A, 20V
title:
SCT20N120H
Vgs(th) (Max) @ Id:
3.5V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
SCT20N120H Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
edacadModelUrl:
/en/models/10414347
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+25V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
175W (Tc)
standardLeadTime:
32 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
650 pF @ 400 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 20 V
Supplier Device Package:
H2PAK-2
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCT20
ECCN:
EAR99
