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This is manufactured by STMicroelectronics. The manufacturer part number is STW70N60DM6-4. It has a maximum of 600 v drain source voltage. The product is available in through hole configuration. The product carries depletion channel mode. The product st, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.75v of maximum gate threshold voltage. It provides up to 0.036 ω maximum drain source resistance. The package is a sort of to-247-4. It consists of 1 elements per chip. While 62 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 4 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 42mohm @ 31a, 10v. The maximum gate charge and given voltages include 99 nc @ 10 v. The typical Vgs (th) (max) of the product is 4.75v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 390w (tc). The product's input capacitance at maximum includes 4360 pf @ 100 v. to-247-4 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 62a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stw70, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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