N-Channel 80-V (D-S) MOSFET D2PAK (TO-26

SUM60020E-GE3 N-Channel 80-V (D-S) MOSFET D2PAK (TO-26
Vishay

Product Information

Maximum Continuous Drain Current:
150 A
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
151.2 nC @ 10 V
Channel Type:
N
Length:
10.41mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
375 W
Maximum Gate Source Voltage:
±20 V
Height:
4.57mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
2.4 mΩ
RoHs Compliant
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This is N-Channel 80-V (D-S) MOSFET D2PAK (TO-26 manufactured by Vishay. The manufacturer part number is SUM60020E-GE3. While 150 a of maximum continuous drain current. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 80 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 151.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.41mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 375 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.57mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 2.4 mω maximum drain source resistance.

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Datasheet SUM60020E-GE3(Technical Reference)

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