Automotive N-Channel 40 V (D-S) 175C MOS

SQJA42EP-T1_GE3 Automotive N-Channel 40 V (D-S) 175C MOS
Vishay

Product Information

Maximum Continuous Drain Current:
20 A
Width:
4.47mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.3V
Package Type:
PowerPAK SO-8L
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
22 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
27 W
Maximum Gate Source Voltage:
±20 V
Height:
1.01mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
16 mΩ
RoHs Compliant
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This is Automotive N-Channel 40 V (D-S) 175C MOS manufactured by Vishay. The manufacturer part number is SQJA42EP-T1_GE3. While 20 a of maximum continuous drain current. Furthermore, the product is 4.47mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.3v of maximum gate threshold voltage. The package is a sort of powerpak so-8l. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.3v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 22 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 27 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.01mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 16 mω maximum drain source resistance.

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Datasheet SQJA42EP-T1_GE3(Technical Reference)

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