Automotive Dual N-Channel 20 V (D-S) 175

SQ1922AEEH-T1_GE3 Automotive Dual N-Channel 20 V (D-S) 175
Vishay

Product Information

Maximum Continuous Drain Current:
850 mA
Width:
1.35mm
Automotive Standard:
AEC-Q101
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
SOT-363
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
0.9 nC @ 10 V
Channel Type:
N
Length:
2.2mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.5 W
Maximum Gate Source Voltage:
±12 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
530 mΩ
RoHs Compliant
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This is Automotive Dual N-Channel 20 V (D-S) 175 manufactured by Vishay. The manufacturer part number is SQ1922AEEH-T1_GE3. While 850 ma of maximum continuous drain current. Furthermore, the product is 1.35mm wide. The product complies with automotive standard - aec-q101. It has a maximum of 20 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of sot-363. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 0.9 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 2.2mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.5 w maximum power dissipation. It features a maximum gate source voltage of ±12 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 530 mω maximum drain source resistance.

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Datasheet SQ1922AEEH-T1_GE3(Technical Reference)

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