Dual N-Channel 30 V (D-S) MOSFET with Sc

SiZF920DT-T1-GE3 Dual N-Channel 30 V (D-S) MOSFET with Sc
Vishay

Product Information

Maximum Drain Source Voltage:
30 (Channel 1) V, 30 (Channel 2) V
Typical Gate Charge @ Vgs:
19 nC @ 15 V (Channel 1), 83 nC @ 15 V (Channel 2)
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
28 W, 74 W
Maximum Gate Source Voltage:
+16 V, +20 V, -12 V, -16 V
Maximum Gate Threshold Voltage:
2.2 (Channel 2) V, 2.4 (Channel 1) V
Height:
0.7mm
Width:
5.1mm
Length:
6.1mm
Maximum Drain Source Resistance:
0.0014 (Channel 2) Ω, 0.005 (Channel 1) Ω
Package Type:
PowerPAIR 6 x 5 F
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
197 (Channel 2) A, 76 (Channel 1) A
Minimum Gate Threshold Voltage:
1.1 (Channel 1) V, 1.1 (Channel 2) V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Dual
RoHs Compliant
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This is Dual N-Channel 30 V (D-S) MOSFET with Sc manufactured by Vishay. The manufacturer part number is SiZF920DT-T1-GE3. It has a maximum of 30 (channel 1) v, 30 (channel 2) v drain source voltage. With a typical gate charge at Vgs includes 19 nc @ 15 v (channel 1), 83 nc @ 15 v (channel 2). The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 28 w, 74 w maximum power dissipation. It features a maximum gate source voltage of +16 v, +20 v, -12 v, -16 v. The product carries 2.2 (channel 2) v, 2.4 (channel 1) v of maximum gate threshold voltage. In addition, the height is 0.7mm. Furthermore, the product is 5.1mm wide. Its accurate length is 6.1mm. It provides up to 0.0014 (channel 2) ω, 0.005 (channel 1) ω maximum drain source resistance. The package is a sort of powerpair 6 x 5 f. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 197 (channel 2) a, 76 (channel 1) a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1.1 (channel 1) v, 1.1 (channel 2) v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers dual transistor configuration.

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Datasheet SiZF920DT-T1-GE3(Technical Reference)

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