P-Channel 30-V (D-S) MOSFET PowerPAK 080

SiUD401ED-T1-GE3 P-Channel 30-V (D-S) MOSFET PowerPAK 080
Vishay

Product Information

Maximum Continuous Drain Current:
500 mA
Width:
0.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.4V
Package Type:
PowerPAK 0806
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.3 nC @ 15 V
Channel Type:
P
Length:
0.8mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.25 W
Maximum Gate Source Voltage:
±12 V
Height:
0.4mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
3.5 Ω
RoHs Compliant
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This is P-Channel 30-V (D-S) MOSFET PowerPAK 080 manufactured by Vishay. The manufacturer part number is SiUD401ED-T1-GE3. While 500 ma of maximum continuous drain current. Furthermore, the product is 0.6mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 1.4v of maximum gate threshold voltage. The package is a sort of powerpak 0806. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.6v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.3 nc @ 15 v. The product is available in [Cannel Type] channel. Its accurate length is 0.8mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.25 w maximum power dissipation. It features a maximum gate source voltage of ±12 v. In addition, the height is 0.4mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 3.5 ω maximum drain source resistance.

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Datasheet SiUD401ED-T1-GE3(Technical Reference)

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