P-Channel 20-V (D-S) MOSFET PowerPAK 121

SiSS61DN-T1-GE3 P-Channel 20-V (D-S) MOSFET PowerPAK 121
Vishay

Product Information

Maximum Continuous Drain Current:
111.9 A
Width:
3.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.9V
Package Type:
PowerPAK 1212-8S
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
154 nC @ 10 V
Channel Type:
P
Length:
3.3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
65.8 W
Maximum Gate Source Voltage:
±8 V
Height:
0.78mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
9.8 mΩ
RoHs Compliant
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This is P-Channel 20-V (D-S) MOSFET PowerPAK 121 manufactured by Vishay. The manufacturer part number is SiSS61DN-T1-GE3. While 111.9 a of maximum continuous drain current. Furthermore, the product is 3.3mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.9v of maximum gate threshold voltage. The package is a sort of powerpak 1212-8s. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 154 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.3mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 65.8 w maximum power dissipation. It features a maximum gate source voltage of ±8 v. In addition, the height is 0.78mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 9.8 mω maximum drain source resistance.

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Datasheet SiSS61DN-T1-GE3(Technical Reference)

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