MOSFET PowerPAK 1212-8F

SiSF20DN-T1-GE3 MOSFET PowerPAK 1212-8F
Vishay

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
22 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
69.4 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
3V
Height:
0.75mm
Width:
3.4mm
Length:
3.4mm
Maximum Drain Source Resistance:
18 mΩ
Package Type:
PowerPAK 1212-8SCD
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
52 A
Minimum Gate Threshold Voltage:
1V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Common Drain
RoHs Compliant
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This is MOSFET PowerPAK 1212-8F manufactured by Vishay. The manufacturer part number is SiSF20DN-T1-GE3. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 22 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 69.4 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 0.75mm. Furthermore, the product is 3.4mm wide. Its accurate length is 3.4mm. It provides up to 18 mω maximum drain source resistance. The package is a sort of powerpak 1212-8scd. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 52 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers common drain transistor configuration.

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Datasheet SiSF20DN-T1-GE3(Technical Reference)

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