EF Series Power MOSFET With Fast Body Di

SIHP22N60EF-GE3 EF Series Power MOSFET With Fast Body Di
Vishay

Product Information

Maximum Continuous Drain Current:
19 A
Width:
4.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
48 nC @ 10 V
Channel Type:
N
Length:
10.51mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
179 W
Maximum Gate Source Voltage:
±30 V
Height:
9.01mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
182 mΩ
RoHs Compliant
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This is EF Series Power MOSFET With Fast Body Di manufactured by Vishay. The manufacturer part number is SIHP22N60EF-GE3. While 19 a of maximum continuous drain current. Furthermore, the product is 4.65mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 48 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.51mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 179 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 9.01mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 182 mω maximum drain source resistance.

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Datasheet SIHP22N60EF-GE3(Technical Reference)

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