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This is EF Series Power MOSFET With Fast Body Di manufactured by Vishay. The manufacturer part number is SIHG22N60EF-GE3. While 19 a of maximum continuous drain current. Furthermore, the product is 5.31mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-247ac. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 48 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.87mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 179 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 20.82mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 182 mω maximum drain source resistance.
For more information please check the datasheets.
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