E Series Power MOSFET Thin-Lead TO-220 F

SIHA100N60E-GE3 E Series Power MOSFET Thin-Lead TO-220 F
Vishay

Product Information

Maximum Continuous Drain Current:
30 A
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
33 nC @ 10 V
Channel Type:
N
Length:
10.3mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
35 W
Maximum Gate Source Voltage:
±30 V
Height:
15.3mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
100 mΩ
RoHs Compliant
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This is E Series Power MOSFET Thin-Lead TO-220 F manufactured by Vishay. The manufacturer part number is SIHA100N60E-GE3. While 30 a of maximum continuous drain current. Furthermore, the product is 4.7mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 33 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.3mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 35 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 15.3mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 100 mω maximum drain source resistance.

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Datasheet SIHA100N60E-GE3(Technical Reference)

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