Maximum Continuous Drain Current:
15 A
Width:
8.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4.75V
Package Type:
PowerFLAT 8 x 8 HV
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.25V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
24 nC @ 10 V
Channel Type:
N
Length:
8.1mm
Pin Count:
5
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
110 W
Maximum Gate Source Voltage:
±25 V
Height:
0.9mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.6V
Maximum Drain Source Resistance:
215 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
215mOhm @ 7.5A, 10V
title:
STL26N60DM6
Vgs(th) (Max) @ Id:
4.75V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STL26N60DM6 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/9997324
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
110W (Tc)
standardLeadTime:
14 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
940 pF @ 100 V
Mounting Type:
Surface Mount
Series:
MDmesh™ DM6
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 10 V
Supplier Device Package:
PowerFlat™ (8x8) HV
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STL26
ECCN:
EAR99
