Nch 600V 20A Power MOSFET

ROHM

Product Information

Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
45 nC @ 15 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
252 W
Maximum Gate Source Voltage:
±30 V
Maximum Gate Threshold Voltage:
7V
Height:
21.25mm
Width:
5.22mm
Length:
16.24mm
Maximum Drain Source Resistance:
230 mΩ
Package Type:
TO-247G
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
20 A
Minimum Gate Threshold Voltage:
5V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Nch 600V 20A Power MOSFET manufactured by ROHM. The manufacturer part number is R6020JNZ4C13. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 45 nc @ 15 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 252 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. The product carries 7v of maximum gate threshold voltage. In addition, the height is 21.25mm. Furthermore, the product is 5.22mm wide. Its accurate length is 16.24mm. It provides up to 230 mω maximum drain source resistance. The package is a sort of to-247g. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 20 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 5v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet R6020JNZ4C13(Technical Reference)

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