Nch 600V 12A Power MOSFET

R6012JNXC7G Nch 600V 12A Power MOSFET
ROHM

Product Information

Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
28 nC @ 15 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
60 W
Maximum Gate Source Voltage:
±30 V
Maximum Gate Threshold Voltage:
7V
Height:
16.27mm
Width:
5mm
Length:
10.3mm
Maximum Drain Source Resistance:
390 mΩ
Package Type:
TO-220FM
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
12 A
Minimum Gate Threshold Voltage:
5V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Nch 600V 12A Power MOSFET manufactured by ROHM. The manufacturer part number is R6012JNXC7G. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 28 nc @ 15 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 60 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. The product carries 7v of maximum gate threshold voltage. In addition, the height is 16.27mm. Furthermore, the product is 5mm wide. Its accurate length is 10.3mm. It provides up to 390 mω maximum drain source resistance. The package is a sort of to-220fm. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 12 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 5v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet R6012JNXC7G(Technical Reference)

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