N-ch Power MOSFET 4 pin

TK31Z60X-S1F-O N-ch Power MOSFET 4 pin
Toshiba

Product Information

Maximum Continuous Drain Current:
30.8 A
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
65 nC @ 10 V
Channel Type:
N
Length:
15.94mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
230 W
Maximum Gate Source Voltage:
±30 V
Height:
20.95mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
880 mΩ
RoHs Compliant
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This is N-ch Power MOSFET 4 pin manufactured by Toshiba. The manufacturer part number is TK31Z60X,S1F(O. While 30.8 a of maximum continuous drain current. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 65 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.94mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 230 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 20.95mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.7v . It provides up to 880 mω maximum drain source resistance.

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Datasheet TK31Z60X,S1F(O(Technical Reference)

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