TK5P50D(T6RSS-Q) N-Channel MOSFET, 5 A, 500 V, 3-Pin DPAK Toshiba

TK5P50D-T6RSS-Q- TK5P50D(T6RSS-Q) N-Channel MOSFET, 5 A, 500 V, 3-Pin DPAK Toshiba
TK5P50D(T6RSS-Q)
Toshiba

Product Information

Maximum Drain Source Voltage:
500 V
Typical Gate Charge @ Vgs:
11 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
80 W
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
4.4V
Height:
2.3mm
Width:
6.1mm
Length:
6.6mm
Maximum Drain Source Resistance:
1.5 Ω
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-Channel MOSFET 5 A 500 V 3-Pin DPAK manufactured by Toshiba. The manufacturer part number is TK5P50D(T6RSS-Q). It has a maximum of 500 v drain source voltage. With a typical gate charge at Vgs includes 11 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 80 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. The product carries 4.4v of maximum gate threshold voltage. In addition, the height is 2.3mm. Furthermore, the product is 6.1mm wide. Its accurate length is 6.6mm. It provides up to 1.5 ω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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TK5P50D,Field Effect Transistor Silicon N Channel MOS Type(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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