Typical Gate Charge @ Vgs:
95 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 W
Maximum Gate Source Voltage:
±25 V
Maximum Gate Threshold Voltage:
5V
Height:
4.37mm
Width:
9.35mm
Length:
10.4mm
Maximum Drain Source Resistance:
40 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
53 A
Minimum Gate Threshold Voltage:
3V
Forward Diode Voltage:
1.5V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
40mOhm @ 26.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
95 nC @ 10 V
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STB45N30M5 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/9664015
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
250W (Tc)
standardLeadTime:
14 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
4240 pF @ 100 V
Mounting Type:
Surface Mount
Series:
MDmesh™ M5
Supplier Device Package:
TO-263 (D2PAK)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
53A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB45
ECCN:
EAR99
