Category:
Driver MOSFET
Dimensions:
3 x 1.6 x 0.8mm
Maximum Continuous Drain Current:
5 A
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
TSST
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
150 °C
Typical Gate Charge @ Vgs:
13 nC @ 5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
1300 pF @ -10 V
Length:
3mm
Pin Count:
8
Forward Transconductance:
3.1S
Typical Turn-Off Delay Time:
90 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.25 W
Series:
RT1E050RP
Maximum Gate Source Voltage:
±20 V
Height:
0.8mm
Typical Turn-On Delay Time:
10 ns
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
56 mΩ
