SSM6N35FU(TE85L,F) Dual N-Channel MOSFET, 180 mA, 20 V SSM6, 6-Pin US Toshiba

Enrgtech Part No: ET17546236
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Manufacturer Part No:
SSM6N35FU(TE85L,F)
|
Manufacturer: Toshiba

SSM6N35FU-TE85L-F- SSM6N35FU(TE85L,F) Dual N-Channel MOSFET, 180 mA, 20 V SSM6, 6-Pin US Toshiba

Product Information

Maximum Drain Source Voltage:

20 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Maximum Power Dissipation:

200 mW

Series:

SSM6

Maximum Gate Source Voltage:

-10 V, +10 V

Maximum Gate Threshold Voltage:

Height:

0.9mm

Width:

1.25mm

Length:

1.25mm

Maximum Drain Source Resistance:

20 Ω

Package Type:

US6

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This is Dual N-Channel MOSFET 180 mA 20 V SSM6 6-Pin US manufactured by Toshiba. The manufacturer part number is SSM6N35FU(TE85L,F). It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 200 mw maximum power dissipation. The product ssm6, is a highly preferred choice for users. It features a maximum gate source voltage of -10 v, +10 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 1.25mm wide. Its accurate length is 1.25mm. It provides up to 20 ω maximum drain source resistance. The package is a sort of us6. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 180 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.

SSM6N35FU, Dual MOSFET N-Channel 1.2V Drive(Technical Reference)

ESD Control Selection Guide V1(Technical Reference)

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SSM6N35FU(TE85L,F) Dual N-Channel MOSFET, 180 mA, 20 V SSM6, 6-Pin US Toshiba