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NP110N04PUG-E1-AZ N-Channel MOSFET, 110 A, 40 V, 3-Pin D2PAK Renesas

NP110N04PUG-E1-AZ  N-Channel MOSFET, 110 A, 40 V, 3-Pin D2PAK Renesas
NP110N04PUG-E1-AZ
Renesas Electronics

Product Information

Maximum Continuous Drain Current:
110 A
Transistor Material:
Si
Width:
9.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
2 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
260 nC @ 10 V
Channel Type:
N
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.8 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.45mm
Minimum Operating Temperature:
-55 °C
RoHs Compliant
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This is N-Channel MOSFET 110 A 40 V 3-Pin D2PAK Renesas manufactured by Renesas Electronics. The manufacturer part number is NP110N04PUG-E1-AZ. While 110 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.15mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 4v of maximum gate threshold voltage. It provides up to 2 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 260 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.8 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.45mm. Whereas, the minimum operating temperature of the product is -55 °c.

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N-Channel Power MOSFET Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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