NP110N04PUG-E1-AZ N-Channel MOSFET, 110 A, 40 V, 3-Pin D2PAK Renesas

Enrgtech Part No: ET17546165
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Manufacturer Part No:
NP110N04PUG-E1-AZ
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Manufacturer: Renesas Electronics

NP110N04PUG-E1-AZ N-Channel MOSFET, 110 A, 40 V, 3-Pin D2PAK Renesas

Product Information

Maximum Continuous Drain Current:

110 A

Transistor Material:

Width:

9.15mm

Transistor Configuration:

Single

Maximum Drain Source Voltage:

40 V

Maximum Gate Threshold Voltage:

Maximum Drain Source Resistance:

2 mΩ

Package Type:

D2PAK (TO-263)

Number of Elements per Chip:

Maximum Operating Temperature:

+175 °C

Typical Gate Charge @ Vgs:

260 nC @ 10 V

Channel Type:

Checking for live stock

This is N-Channel MOSFET 110 A 40 V 3-Pin D2PAK Renesas manufactured by Renesas Electronics. The manufacturer part number is NP110N04PUG-E1-AZ. While 110 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.15mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 4v of maximum gate threshold voltage. It provides up to 2 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 260 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.8 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.45mm. Whereas, the minimum operating temperature of the product is -55 °c.

N-Channel Power MOSFET Datasheet(Technical Reference)

ESD Control Selection Guide V1(Technical Reference)

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NP110N04PUG-E1-AZ N-Channel MOSFET, 110 A, 40 V, 3-Pin D2PAK Renesas