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This is Small Low ON resistance MOSFETs manufactured by Toshiba. The manufacturer part number is SSM3K56FS,LF(T. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 1 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 150 mw maximum power dissipation. It features a maximum gate source voltage of ±8 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.65mm. Furthermore, the product is 0.8mm wide. Its accurate length is 1.6mm. It provides up to 235 mω maximum drain source resistance. The package is a sort of 2-2h1s. It consists of 1 elements per chip. While 800 ma of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.4v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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