MOSFET BVDSS: 8V-24V X2-DFN2015-3 T&R 3K

DMP2045UFY4-7 MOSFET BVDSS: 8V-24V X2-DFN2015-3 T&R 3K
DiodesZetex

Product Information

Maximum Continuous Drain Current:
4.7 A
Width:
1.57mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1V
Package Type:
X2-DFN2015
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.8 nC @ 4.5V
Channel Type:
P
Length:
2.07mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.49 W
Maximum Gate Source Voltage:
±8 V
Height:
0.35mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
160 mΩ
RoHs Compliant
Checking for live stock

This is MOSFET BVDSS: 8V-24V X2-DFN2015-3 T&R 3K manufactured by DiodesZetex. The manufacturer part number is DMP2045UFY4-7. While 4.7 a of maximum continuous drain current. Furthermore, the product is 1.57mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of x2-dfn2015. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 6.8 nc @ 4.5v. The product is available in [Cannel Type] channel. Its accurate length is 2.07mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.49 w maximum power dissipation. It features a maximum gate source voltage of ±8 v. In addition, the height is 0.35mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 160 mω maximum drain source resistance.

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Datasheet DMP2045UFY4-7(Technical Reference)

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