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This is SiHG64N65E-GE3 N-Channel MOSFET 64 A 650 V E Series 3-Pin TO-247AC manufactured by Vishay. The manufacturer part number is SIHG64N65E-GE3. It has a maximum of 650 v drain source voltage. With a typical gate charge at Vgs includes 239 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 520 w maximum power dissipation. The product e series, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product is available in [Cannel Type] channel. It provides up to 47 mω maximum drain source resistance. The package is a sort of to-247ac. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 64 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. Its forward diode voltage is 1.2v . The transistor is manufactured from highly durable si material. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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