N-Ch MOSFET SO-8 80V 16.5mohm @ 10V Qg=
Product Information
Maximum Drain Source Voltage:
80 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
TrenchFET
Channel Type:
N
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
0.022 O
Package Type:
SO-8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
9.5 A
Pin Count:
8
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FAQs
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You can order Vishay brand products with SI4896DY-T1-E3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Ch MOSFET SO-8 80V 16.5mohm @ 10V Qg=. You can also check on our website or by contacting our customer support team for further order details on N-Ch MOSFET SO-8 80V 16.5mohm @ 10V Qg=.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET17067332 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET17067332.
Yes. We ship SI4896DY-T1-E3 Internationally to many countries around the world.
This is N-Ch MOSFET SO-8 80V 16.5mohm @ 10V Qg= manufactured by Vishay. The manufacturer part number is SI4896DY-T1-E3. It has a maximum of 80 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 0.022 o maximum drain source resistance. The package is a sort of so-8. It consists of 1 elements per chip. While 9.5 a of maximum continuous drain current. It contains 8 pins.
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