Dual N-Ch MOSFET SC-89-6 20V 396 mohms @

SI1034CX-T1-GE3 Dual N-Ch MOSFET SC-89-6 20V 396 mohms @
Vishay

Product Information

Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
TrenchFET
Channel Type:
N
Maximum Gate Threshold Voltage:
1V
Maximum Drain Source Resistance:
0.396 O
Package Type:
SC-89-6
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
500 mA
Pin Count:
6
RoHs Compliant
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This is Dual N-Ch MOSFET SC-89-6 20V 396 mohms @ manufactured by Vishay. The manufacturer part number is SI1034CX-T1-GE3. It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 1v of maximum gate threshold voltage. It provides up to 0.396 o maximum drain source resistance. The package is a sort of sc-89-6. It consists of 2 elements per chip. While 500 ma of maximum continuous drain current. It contains 6 pins.

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Datasheet(Technical Reference)

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You will get a confirmation email regarding your order of Dual N-Ch MOSFET SC-89-6 20V 396 mohms @. You can also check on our website or by contacting our customer support team for further order details on Dual N-Ch MOSFET SC-89-6 20V 396 mohms @.
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