Dual N-Ch MOSFET SO-8 60V 41mohm @ 10V 1

SI4946BEY-T1-E3 Dual N-Ch MOSFET SO-8 60V 41mohm @ 10V 1
Vishay

Product Information

Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
TrenchFET
Channel Type:
N
Maximum Gate Threshold Voltage:
3V
Maximum Drain Source Resistance:
0.052 O
Package Type:
SO-8
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
6.5 A
Pin Count:
8
RoHs Compliant
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This is Dual N-Ch MOSFET SO-8 60V 41mohm @ 10V 1 manufactured by Vishay. The manufacturer part number is SI4946BEY-T1-E3. It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3v of maximum gate threshold voltage. It provides up to 0.052 o maximum drain source resistance. The package is a sort of so-8. It consists of 2 elements per chip. While 6.5 a of maximum continuous drain current. It contains 8 pins.

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Datasheet(Technical Reference)

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You will get a confirmation email regarding your order of Dual N-Ch MOSFET SO-8 60V 41mohm @ 10V 1. You can also check on our website or by contacting our customer support team for further order details on Dual N-Ch MOSFET SO-8 60V 41mohm @ 10V 1.
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