Category:
Power MOSFET
Dimensions:
10.52 x 4.7 x 15.85mm
Maximum Continuous Drain Current:
28 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
80 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2714 pF @ 100 V
Length:
10.52mm
Pin Count:
3
Forward Transconductance:
9.7S
Typical Turn-Off Delay Time:
82 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 W
Series:
EF Series
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15.85mm
Typical Turn-On Delay Time:
24 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
123 mΩ
