P-Ch MOSFET SO-8 30V 5mohm @ 10V

SI4459ADY-T1-GE3 P-Ch MOSFET SO-8 30V 5mohm @ 10V
Vishay

Product Information

Maximum Drain Source Voltage:
30 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
TrenchFET
Channel Type:
P
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
0.0077 O
Package Type:
SO-8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
29 A
Pin Count:
8
RoHs Compliant
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This is P-Ch MOSFET SO-8 30V 5mohm @ 10V manufactured by Vishay. The manufacturer part number is SI4459ADY-T1-GE3. It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.5v of maximum gate threshold voltage. It provides up to 0.0077 o maximum drain source resistance. The package is a sort of so-8. It consists of 1 elements per chip. While 29 a of maximum continuous drain current. It contains 8 pins.

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Datasheet(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of P-Ch MOSFET SO-8 30V 5mohm @ 10V. You can also check on our website or by contacting our customer support team for further order details on P-Ch MOSFET SO-8 30V 5mohm @ 10V.
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