Category:
Power MOSFET
Dimensions:
15.87 x 4.82 x 20.82mm
Maximum Continuous Drain Current:
65 A
Width:
4.82mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
40 mΩ
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
4.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
136 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4740 pF @ 400 V
Length:
15.87mm
Pin Count:
3
Forward Transconductance:
46S
Typical Turn-Off Delay Time:
95 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
417 W
Maximum Gate Source Voltage:
±30 V
Height:
20.82mm
Typical Turn-On Delay Time:
35 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
