Name: SI4204DY-T1-GE3, Vishay
Brand: Vishay
SKU: ET16990681
Price: 0.62 GBP
Availability: InStock

SI4204DY-T1-GE3 Dual N-Ch MOSFET SO-8 BWL 20V 4.6mohm @

(0)

Product Information

Maximum Drain Source Voltage:

20 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Series:

TrenchFET

Channel Type:

Maximum Gate Threshold Voltage:

2.4V

Maximum Drain Source Resistance:

0.006 O

Package Type:

SO-8

Number of Elements per Chip:

Maximum Continuous Drain Current:

19.8 A

Pin Count:

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This is Dual N-Ch MOSFET SO-8 BWL 20V 4.6mohm @ manufactured by Vishay. The manufacturer part number is SI4204DY-T1-GE3. It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.4v of maximum gate threshold voltage. It provides up to 0.006 o maximum drain source resistance. The package is a sort of so-8. It consists of 2 elements per chip. While 19.8 a of maximum continuous drain current. It contains 8 pins.

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You can order Vishay brand products with SI4204DY-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

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You will get a confirmation email regarding your order of Dual N-Ch MOSFET SO-8 BWL 20V 4.6mohm @. You can also check on our website or by contacting our customer support team for further order details on Dual N-Ch MOSFET SO-8 BWL 20V 4.6mohm @.

We use our internationally recognized delivery partners UPS/DHL. Collection of ET16990681 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16990681.

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Dual N-Ch MOSFET SO-8 BWL 20V 4.6mohm @

SI4204DY-T1-GE3

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